Article on modelling MTJ devices published

This work introduces tunneling magneto-resistance within the 3D drift-diffusion model. This allows modelling devices with insulator layers, e.g. MTJs, where both GMR and TMR contributions can be considered within the same model, also allowing self-consistent computation of spin torques. An explicit solution to the drift-diffusion model is also derived, which allows analysing the effect of both the reference and free layer thickness on the spin-transfer torque polarization and field-like coefficient.

S. Lepadatu and A. Dobrynin, Journal of Physics: Condensed Matter 35, 115801 (2023).